HVIGBT MODULES / HVIPM
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Power Devices from Mitsubishi Electric.
Semiconductors are indispensable components for today’s increasingly high performance products, making them equally important to “resources” for a better future.
High-power modules are key devices for controlling power conversion in electronic systems in a wide range of power classes from several kilowatts up to several megawatts. The New Dual HVIGBT module will meet the demand for efficient, high power density semiconductor devices, offering a wide range of current and voltage ratings. High energy efficiency and power density in inverters is achieved with the use of 7th Generation IGBTs adopting CSTBTTM and RFC diodes which keep the power loss in inverter systems low. Inverter capability is increased by three AC main terminals on the LV100 package which spread and equalize the current density. Maximum performance is reached by an improved package technology and low parasitic inductance.
The common frame size of the two LV100 and HV100 modules supports more diverse inverter configurations and power ratings. Simple, standard 2-in-1 connections allow for an optimal system design as well as for voltage and current ratings ranging from 1.7 kV/900 A to 6.5 kV/225 A, making system configuration scalable and more flexible.
Thanks to the standardized package dimensions of 100 mm x 140 mm x 40 mm, manufacturers of industrial electronics are able to simplify design and secure multiple sources for inverters. Moreover, the new standardized package is compatible with the terminal and attachment locations of Infineon Technologies AG, Germany.
// Media Centre